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JS28F256P33BFE Folha de dados(PDF) 35 Page - Micron Technology

Nome de Peças JS28F256P33BFE
Descrição Electrónicos  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
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Fabricante Electrônico  MICRON [Micron Technology]
Página de início  http://www.micron.com
Logo MICRON - Micron Technology

JS28F256P33BFE Folha de dados(HTML) 35 Page - Micron Technology

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Datasheet
Aug 2009
35
Order Number:320003-08
P33-65nm
11.1.1
Read Mode
The Read Mode (RM) bit selects synchronous burst-mode or asynchronous page-mode
operation for the device. When the RM bit is set, asynchronous page mode is selected
(default). When RM is cleared, synchronous burst mode is selected.
11.1.2
Latency Count
The Latency Count (LC) bits tell the device how many clock cycles must elapse from the
rising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until the
first valid data word is driven onto DQ[15:0]. The input clock frequency is used to
determine this value and Figure 9 shows the data output latency for the different
settings of LC. The maximum Latency Count for P33 would be Code 4 based on the Max
clock frequency specification of 52 MHz, and there will be zero WAIT States when
bursting within the word line. Please also refer to Section 11.1.3, “End of Word Line
(EOWL) Considerations” on page 37 for more information on EOWL.
Refer to Table 12, “LC and Frequency Support” on page 36 for Latency Code Settings.
3
Burst Wrap (BW)
0 =Wrap; Burst accesses wrap within burst length set by BL[2:0]
1 =No Wrap; Burst accesses do not wrap within burst length (default)
2:0
Burst Length (BL[2:0])
001 =4-word burst
010 =8-word burst
011 =16-word burst
111 =Continuous-word burst (default)
(Other bit settings are reserved)
Table 11: Read Configuration Register Description (Sheet 2 of 2)



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