BTB12 datasheet(3/12 Pages) STMICROELECTRONICS

3 / 12 page

BTA12, BTB12, T12xx

Characteristics

3/12

Table 4.

Electrical characteristics (Tj = 25°C, unless otherwise specified)

standard (4 quadrants)

Symbol

Test Conditions

Quadrant

BTA12 / BTB12

Unit

IGT

(1)

Minimum IGT is guaranted at 5% of IGT max.

VD = 12 V

RL = 30 Ω

I - II - III

MAX.

100

VGT

ALL

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ Tj = 125° C

ALL

MIN.

0.2

(2)

for both polarities of A2 referenced to A1.

IT = 500 mA

MAX.

IG = 1.2 IGT

I - III - IV

MAX.

100

dV/dt (2)

VD = 67% VDRM gate open Tj = 125° C

MIN.

200

400

V/µs

(dV/dt)c (2)

(dI/dt)c = 5.3 A/ms

Tj = 125° C

MIN.

V/µs

Table 5.

Static characteristics

Symbol

Test conditions

Value

Unit

(1)

for both polarities of A2 referenced to A1

ITM = 17 A

tp = 380 µs

Tj = 25° C

MAX.

1.55

Vt0

(1)

Threshold voltage

Tj = 125° C

MAX.

0.85

(1)

Dynamic resistance

Tj = 125° C

MAX.

IDRM

IRRM

VDRM = VRRM

Tj = 25° C

MAX.

5µA

Tj= 125° C

Table 6.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

I2PAK / D2PAK / TO-220AB

1.4

°C/W

TO-220AB insulated

2.3

Rth(j-a)

Junction to ambient

S(1) = 1 cm2

Copper surface under tab.

D2PAK

°C/W

TO-220AB / I2PAK

TO-220AB insulated

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