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STPS1045B Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STPS1045B
Descrição Electrónicos  Power Schottky rectifier
PDF  7 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS1045B Folha de dados(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS1045B
2/7
Doc ID 6085 Rev 6
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF
2
(RMS)
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)/
pin
Forward rms current
7
A
IF(AV)
Average forward current
Tc = 150 °C δ = 0.5
10
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp = 2 µs F= 1 kHz
1
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
4000
W
Tstg
Storage temperature range
- 65 to + 150
°C
Tj
Maximum operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
3
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms,
δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
100
μA
Tj = 125 °C
7
15
mA
VF
(2)
2.
Pulse test: tp = 380 µs,
δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 10 A
0.63
V
Tj = 125 °C
0.50
0.57
Tj = 25 °C
IF = 20 A
0.84
Tj = 125 °C
0.65
0.72
dPtot
dTj
<
1
Rth(j-a)



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