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CSD17381F4 Folha de dados(PDF) 4 Page - Texas Instruments

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Nome de Peças CSD17381F4
Descrição Electrónicos  30-V, N-Channel NexFET??Power MOSFETs
PDF  11 Pages
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

CSD17381F4 Folha de dados(HTML) 4 Page - Texas Instruments

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background image
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 1.8V
VGS = 8V
ID =0.5A
G001
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
60
70
80
90
100
110
120
130
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160
0
2
4
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VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 0.5A
TC = 125ºC Id = 0.5A
G001
0
1
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8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Qg - Gate Charge (nC)
ID = 0.5A
VDS =15V
G001
1
10
100
1000
0
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6
9
12
15
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30
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD17381F4
SLPS411A – APRIL 2013 – REVISED JULY 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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