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RN1102MFVTPL3 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças RN1102MFVTPL3
Descrição Electrónicos  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  8 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1102MFVTPL3 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

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RN1101MFV
∼RN1106MFV
2010-03-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50 V, IE = 0
100
Collector cutoff current
RN1101MFV to
1106MFV
ICEO
VCE = 50 V, IB = 0
500
nA
RN1101MFV
0.82
1.52
RN1102MFV
0.38
0.71
RN1103MFV
0.17
0.33
RN1104MFV
VEB = 10 V, IC = 0
0.082
0.15
RN1105MFV
0.078
0.145
Emitter cutoff current
RN1106MFV
IEBO
VEB = 5 V, IC = 0
0.074
0.138
mA
RN1101MFV
30
RN1102MFV
50
RN1103MFV
70
RN1104MFV
80
RN1105MFV
80
DC current gain
RN1106MFV
hFE
VCE = 5 V, IC = 10 mA
80
Collector-emitter
saturation voltage
RN1101MFV to
1106MFV
VCE (sat)
IC = 5 mA, IB = 0.5 mA
0.1
0.3
V
RN1101MFV
1.1
2.0
RN1102MFV
1.2
2.4
RN1103MFV
1.3
3.0
RN1104MFV
1.5
5.0
RN1105MFV
0.6
1.1
Input voltage (ON)
RN1106MFV
VI (ON)
VCE = 0.2 V, IC = 5
mA
0.7
1.3
V
RN1101MFV to
1104MFV
1.0
1.5
Input voltage (OFF)
RN1105MFV,
1106MFV
VI (OFF)
VCE = 5 V, IC = 0.1
mA
0.5
0.8
V
Collector output
capacitance
RN1101MFV to
1106MFV
Cob
VCB = 10 V, IE = 0,
f = 1 MHz
0.7
pF
RN1101MFV
3.29
4.7
6.11
RN1102MFV
7
10
13
RN1103MFV
15.4
22
28.6
RN1104MFV
32.9
47
61.1
RN1105MFV
1.54
2.2
2.86
Input resistor
RN1106MFV
R1
3.29
4.7
6.11
kΩ
RN1101MFV to
1104MFV
0.8
1.0
1.2
RN1105MFV
0.0376 0.0468 0.0562
Resistor ratio
RN1106MFV
R1/R2
0.08
0.1
0.12



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