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STN4NF20L Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STN4NF20L
Descrição Electrónicos  N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™II Power MOSFET
PDF  12 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN4NF20L Folha de dados(HTML) 3 Page - STMicroelectronics

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STN4NF20L
Electrical ratings
Doc ID 17445 Rev 2
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 20
V
ID
Drain current continuous TC = 25 °C
1
A
ID
Drain current continuous TC = 100 °C
0.63
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current pulsed
4
A
PTOT
(2)
2.
This value is rated according to Rthj-amb
≤ 10 sec.
Total dissipation at TC = 25 °C
3.3
W
dv/dt (3)
3.
Isd
≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS.
Peak diode recovery voltage slope
20
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-amb
(1)
1.
When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec).
Thermal resistance junction to ambient
38
°C/W
Rthj-amb
(2)
2.
When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec).
62.5
°C/W
Table 4.
Thermal data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive(1)
1.
Pulse width limited by TJMAX.
1A
EAS
Single pulse avalanche energy (2)
2.
Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
90
mJ



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