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TSX561AIYLT Folha de dados(PDF) 10 Page - STMicroelectronics |
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TSX561AIYLT Folha de dados(HTML) 10 Page - STMicroelectronics |
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10 / 27 page ![]() Electrical characteristics TSX56x, TSX56xA 10/27 DocID023274 Rev 3 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 750 900 kHz Fu Unity gain frequency 750 Φm Phase margin 55 Degree Gm Gain margin 9 dB SR Slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 1.1 V/ μs ∫ en Low-frequency peak-to-peak input noise Bandwidth: f = 0.1 to 10 Hz 15 µVpp en Equivalent input noise voltage density f = 1 kHz f = 10 kHz 48 27 THD+N Total harmonic distortion + noise Follower configuration, fin = 1 kHz, RL = 100 kΩ, Vicm = (VCC - 1.5 V)/2, BW = 22 kHz, Vout = 5 Vpp 0.0005 % 1. See Section 4.3: Input offset voltage drift over temperature on page 15. 2. Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. 3. Guaranteed by design. Table 6. Electrical characteristics at VCC+ = +16 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 10 kΩ connected to VCC/2 (unless otherwise specified) (continued) Symbol Parameter Conditions Min. Typ. Max. Unit nV Hz ------------ |
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