MCP87018 datasheet(1/14 Pages) MICROCHIP

Nome de Peças	MCP87018

Descrição Electrónicos	High-Speed N-Channel Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrônico	MICROCHIP [Microchip Technology]

Página de início	http://www.microchip.com

Logo

1 / 14 page

 2013 Microchip Technology Inc.

DS22329A-page 1

MCP87018

Features:

• Low Drain-to-Source On Resistance (RDS(ON))

• Low Total Gate Charge (QG) and Gate-to-Drain

Charge (QGD)

• Low Series Gate Resistance (RG)

•Fast Switching

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking and Automotive Applications

Description:

The MCP87018 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87018 to achieve a low QG for a given RDS(on)

value, resulting in a low Figure of Merit (FOM).

Combined with low RG, the low FOM of the MCP87018

allows high efficiency power conversion with reduced

switching and conduction losses.

Package Type

Product Summary Table:

Unless otherwise indicated, TA = +25°C

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BVDSS

25

—

V

VGS = 0V, ID = 250 µA

Gate-to-Source Threshold Voltage

VGS(TH)

11.3

1.6

V

VDS = VGS, ID = 250 µA

Drain-to-Source On Resistance

RDS(ON)

—1.8

2.2

mΩ

VGS = 4.5V, ID = 25A

—1.5

1.9

mΩ

VGS = 10V, ID = 25A

Total Gate Charge

QG

—

32.5

37

nC

VDS = 12.5V, ID = 25A, VGS = 4.5V

Gate-to-Drain Charge

QGD

—13—

nC

VDS = 12.5V, ID = 25A

Series Gate Resistance

RG

—1.5

—

Ω

—

Thermal Characteristics

Thermal Resistance Junction-to-X

RθJX

——

56

°C/W

Note 1

Thermal Resistance Junction-to-Case

RθJC

——

1.4

°C/W

Note 2

Note

1:

RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

2:

RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.

S

G

S

D

1

2

3

4

5

6

7

8

PDFN 5 x 6

High-Speed N-Channel Power MOSFET

Nº de peça semelhante - MCP87018

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Microchip Technology	MCP87018T-U/MF	719Kb / 16P	High-Speed N-Channel Power MOSFET 11/29/12
Microchip Technology	MCP87018	719Kb / 16P	High-Speed N-Channel Power MOSFET 11/29/12

More results

Descrição semelhante - MCP87018

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Microchip Technology	MCP87030	593Kb / 14P	High-Speed N-Channel Power MOSFET 11/29/12
	MCP87090	995Kb / 18P	High-Speed N-Channel Power MOSFET 11/29/12 2013
	MCP87130	1Mb / 18P	High-Speed N-Channel Power MOSFET 11/29/12 2013
	MCP87022	679Kb / 16P	High-Speed N-Channel Power MOSFET 2012 10/26/12
	MCP87055	663Kb / 16P	High-Speed N-Channel Power MOSFET 2012 10/26/12
	MCP87030	677Kb / 16P	High-Speed N-Channel Power MOSFET 11/29/12
	MCP87018	719Kb / 16P	High-Speed N-Channel Power MOSFET 11/29/12
	MCP87022	679Kb / 16P	High-Speed N-Channel Power MOSFET 10/26/12
	MCP87050	758Kb / 16P	High-Speed N-Channel Power MOSFET 10/26/12
	MCP87055	663Kb / 16P	High-Speed N-Channel Power MOSFET 10/26/12

More results

MCP87018 Folha de dados(PDF) 1 Page - Microchip Technology

MCP87018 Folha de dados(HTML) 1 Page - Microchip Technology

Nº de peça semelhante - MCP87018

Descrição semelhante - MCP87018

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Folha de dados Download

Ligação URL