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STM32F102xB Folha de dados(PDF) 44 Page - STMicroelectronics |
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STM32F102xB Folha de dados(HTML) 44 Page - STMicroelectronics |
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44 / 76 page ![]() Electrical characteristics STM32F102x8, STM32F102xB 44/76 Doc ID 15056 Rev 4 low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 25 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: ● Stop or Standby mode: the clock source is the RC oscillator ● Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 8. 5.3.8 PLL characteristics The parameters given in Table 26 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 8. 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 3. Guaranteed by design, not tested in production. 4. Based on characterization, not tested in production. Table 24. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = −40 to 85 °C unless otherwise specified. Symbol Parameter Min(2) 2. Based on characterization, not tested in production. Typ Max Unit fLSI Frequency 30 40 60 kHz tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time 85 µs IDD(LSI) (3) LSI oscillator power consumption 0.65 1.2 µA Table 25. Low-power mode wakeup timings Symbol Parameter Typ Unit tWUSLEEP (1) 1. The wakeup times are measured from the wakeup event to the point at which the user application code reads the first instruction. Wakeup from Sleep mode 1.8 µs tWUSTOP (1) Wakeup from Stop mode (regulator in run mode) 3.6 µs Wakeup from Stop mode (regulator in low-power mode) 5.4 tWUSTDBY (1) Wakeup from Standby mode 50 µs |
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