MMDF4P03HD datasheet(3/10 Pages) MOTOROLA

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MMDF4P03HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

2.9 V

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

1.2

2.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

6.0

4.0

5.0

3.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

4.0

2.0

1.0

8.0

2.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.8

0.4

0.3

0.2

0.1

ID, DRAIN CURRENT (AMPS)

1.5

1.0

0.18

0.12

0.10

0.08

0.06

0.04

2.0

9.0

–25

–50

TJ, JUNCTION TEMPERATURE (°C)

1.2

0.8

0.6

0.4

0.2

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

5.0

100

1.0

2.0

1.0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

2.0

2.5

3.0

3.5

4.0

3.0

5.0

6.0

3.0

4.0

5.0

6.0

7.0

4.0

5.5

3.0

4.5

5.0

2.5

100

1.0

1.8

0.5

125

150

1.6

1.4

VGS = 10 V

ID = 1.5 A

VGS = 0 V

TJ = 125°C

100

°C

TJ = 25°C

VGS = 4.5 V

10 V

TJ = 25°C

ID = 3 A

VDS ≥ 10 V

TJ = –55°C

100

°C

TJ = 25°C

2.7 V

3.1 V

3.3 V

3.5 V

3.7 V

3.9 V

3.5

0.16

0.14

0.6

0.7

VGS = 10 V

4.1 V

4.5 V

6.0 V

4.3 V

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