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APT8075BVFR Folha de dados(PDF) 2 Page - Advanced Power Technology

Nome de Peças APT8075BVFR
Descrição Electrónicos  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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Fabricante Electrônico  ADPOW [Advanced Power Technology]
Página de início  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT8075BVFR Folha de dados(HTML) 2 Page - Advanced Power Technology

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DYNAMIC CHARACTERISTICS
APT8075BVFR
THERMAL CHARACTERISTICS
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6Ω
UNIT
pF
nC
ns
MIN
TYP
MAX
12
48
1.3
5
Tj = 25°C
160
250
Tj = 125°C
305
525
Tj = 25°C
1.8
Tj = 125°C
6.0
Tj = 25°C
11
Tj = 125°C
18
MIN
TYP
MAX
2600
3120
270
380
135
200
130
195
13
20
66
100
12
24
11
22
45
70
816
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.48
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 4.16mH, RG = 25Ω, Peak IL = 25A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
5 IS ≤ -ID [Cont.], di/dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.



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