Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250

µA)

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125

°C)

Gate-Source Leakage Current (V

GS

=

±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

MAXIMUM RATINGS

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/

°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

800

27

0.300

25

250

±100

24

APT8030B2VR

800

27

108

±30

±40

520

4.16

-55 to 150

300

27

50

2500

G

D

S

APT8030B2VR

800V

27A

0.300

Ω

T-MAX™

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

POWER MOS V

®

mode power MOSFETs. This new technology minimizes the JFET effect,

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• 100% Avalanche Tested

• Lower Leakage

• New T-MAX™ Package

(Clip-mounted TO-247 Package)