APT8024JFLL datasheet(1/2 Pages) ADPOW

Nome de Peças	APT8024JFLL

Descrição Electrónicos	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ADPOW [Advanced Power Technology]

Página de início	http://www.advpowertech.com

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1 / 2 page

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

On State Drain Current 2 (V

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

Drain-Source On-State Resistance 2 (V

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

800

29

0.240

250

1000

±100

35

APT8024JFLL

800

29

116

±30

±40

460

3.68

-55 to 150

300

29

50

2500

APT8024JFLL

800V 29A 0.240

W

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

SOT-227

G

S

D

ISOTOP®

"UL Recognized"

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7TM by significantly lowering R

DS(ON)

and Q

g. Power MOS 7

TM

combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

POWER MOS 7TM

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular SOT-227 Package

•

FREDFET

FAST RECOVERY BODY DIODE

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