AMS34063P datasheet(2/7 Pages) ADMOS

2 / 7 page

Advanced Monolithic Systems, Inc.

6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140

AMS34063

ABSOLUTE MAXIMUM RATINGS (Note 1)

Power Supply Voltage, VCC

40V

Driver Collector Voltage, VC(driver)

40V

Comparator Input Voltage Range, VIR

-0.3V to +40V

Switch Current, ISW

1.5A

Switch Collector Voltage, VC(switch)

40V

Power Dissipation

(Note 3)

Switch Emitter Voltage, VE(switch)

40V

Maximum Junction Temperature

+125

°C

Switch Collector to Emitter Voltage, VCE(switch)

40V

Storage Temperature

-65

°C to +150°C

ELECTRICAL CHARACTERISTICS

Electrical Characteristics at VCC = 5.0V, -40

°C ≤T

≤+85°C, unless otherwise noted.

PARAMETER

CONDITIONS

Min.

AMS34063

Typ.

Max.

Units

Oscillator

Charging Current

5.0V

≤ V

≤ 40V, T

A= 25

°C

µA

Discharge Current

5.0V

≤ V

≤ 40V, T

A= 25

°C

150

200

250

µA

Voltage Swing

TA= 25

°C

0.5

VP-P

Discharge to Charge Current

Ratio

IPK(sense) = VCC, TA= 25

°C

6.0

Current Limit Sense Voltage

ICHG = IDISCHG, TA= 25

°C

250

300

350

Output Switch (Note 2)

Saturation Voltage, Darlington

Connection

ISW = 1.0A, VC(driver) = VC(switch)

1.0

1.3

Saturation Voltage

ISW = 1.0A, IC(driver) = 50mA, (Forced

β ≈ 20)

0.45

0.7

DC Current Gain

ISW = 1.0A, VCE = 5.0V, TA= 25

°C

120

Collector Off-State Current

VCE = 40V, TA= 25

°C

Comparator

Threshold Voltage

1.18

1.25

1.32

Threshold Voltage Line

Regulation

3.0V

≤ V

≤ 40V

0.04

0.2

mV/V

Input Bias Current

VIN = 0V

400

Total Device

Supply Current

5.0V

≤ V

≤ 40V, I

PK(sense) = VCC ,

CT = 0.001

µF, V pin 5 > V

th,

Pin 2 = Gnd, Remaining pins open

2.4

3.5

Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. For guaranteed performance limits and associated test

conditions, see the Electrical Characteristics tables.

Note 2: To minimize power dissipation, low duty cycle pulse testing is used.

Note 3: Power dissipation at TA = 25

°C is equal to 1.0W for the 8 lead P DIP package and 625mW for the SO-8 package. For operation at temperatures above

TA = 25

°C derate the power dissipation at 10mW/°C.

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