8/21/97 4:00 PM

–3–

REV. D

OP297

ELECTRICAL CHARACTERISTICS

OP297E

OP297F

OP297G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Units

Input Offset Voltage

35

100

80

300

110

400

µV

Average Input Offset

Voltage Drift

0.2

0.6

0.5

2.0

0.6

2.0

µV/°C

Input Offset Current

50

450

80

750

80

750

pA

Input Bias Current

50

±450

80

±750

80

±750

pA

Large-Signal Voltage Gain

1200

3200

1000

2500

700

2500

V/mV

Input Voltage Range

IVR

(Note 1)

±13

±13.5

±13

±13.5

±13

±13.5

V

Common-Mode Rejection

CMR

114

130

108

130

108

130

dB

Power Supply Rejection

PSR

to

±20 V

114

0.15

108

0.15

108

0.3

dB

Output Voltage Swing

±13.4

±13

±13.4

±13

±13.4

V

No Load

550

750

550

750

550

750

µA

Supply Voltage

Operating Range

±2.5

±20

±2.5

±20

±2.5

±20

V

NOTES

Specifications subject to change without notice.

15 V, –40 C

≤ T

A

≤ +85 C for OP297E/F/G, unless otherwise noted.)

Wafer Test Limits

Parameter

Symbol

Conditions

Limit

Units

Input Offset Voltage

200

µV max

Input Offset Current

200

pA max

Input Bias Current

±200

pA max

Large-Signal Voltage Gain

1200

V/mV min

Input Voltage Range

IVR

(Note 1)

±13

V min

Common-Mode Rejection

CMR

±13 V

114

dB min

Power Supply

PSR

114

dB min

Output Voltage Swing

Ω±13

V min

Supply Current Per Amplifier

No Load

625

µA max

NOTES

1. Guaranteed by CMR test.

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

DICE CHARACTERISTICS

Dimension shown in inches and (mm).

Contact factory for latest dimensions

OUTPUT A

–INPUT A

+INPUT A

–V

S

0.074 (1.88)

+INPUT B

–INPUT B

OUTPUT B

+V

S

0.118 (3.00)