1) J-STD20 and JESD22

2) All devices tested under avalanche conditions for a time periode of 10ms

Final Data Sheet

2

Rev. 2.2, 2012-12-10

1

Description

Features



Revolutionary semiconductor material - Silicon Carbide



Benchmark switching behavior



No reverse recovery/ No forward recovery



Temperature independent switching behavior



High surge current capability



Pb-free lead plating; RoHS compliant



Qualified according to JEDEC



Breakdown voltage tested at 6.8 mA

2)



Optimized for high temperature operation

Benefits



System efficiency improvement over Si diodes



System cost / size savings due to reduced cooling requirements



Enabling higher frequency / increased power density solutions



Higher system reliability due to lower operating temperatures



Reduced EMI

Applications



Switch mode power supply



Power factor correction



Solar inverter



Uninterruptible power supply

Table 1

Key Performance Parameters

Parameter

Value

Unit

650

V

5

nC

1.1

µJ

3

A

Table 2

Pin Definition

Pin 1

Pin 2

Pin 3

C

A

n.a.

Type / ordering Code

Package

Marking

Related links

IDH03G65C5

PG-TO220-2

D0365C5

www.infineon.com/sic

IDH03G65C5

5

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,

already introduced with G3 is now combined with a new, more compact design

and thin-wafer technology. The result is a new family of products showing

improved efficiency over all load conditions, resulting from both the improved

thermal characteristics and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

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