AD7537LP datasheet(3/8 Pages) AD

3 / 8 page

AD7537

REV. 0

–3–

TIMING CHARACTERISTICS

Limit at

TA = –40 CTA = +55 C

Parameter

TA = +25 C

to +85 C

to +125 C

Units

Test Conditions/Comments

ns min

Address Valid to Write Setup Time

ns min

Address Valid to Write Hold Time

ns min

Data Setup Time

ns min

Data Hold Time

ns min

Chip Select or Update to Write Setup Time

ns min

Chip Select or Update to Write Hold Time

100

ns min

Write Pulse Width

100

ns min

Clear Pulse Width

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS*

(TA = +25

°C unless otherwise stated)

VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +17 V

VREFA, VREFB to AGNDA, AGNDB . . . . . . . . . . . . . . . .

±25 V

VRFBA, VRFBB to AGNDA, AGNDB . . . . . . . . . . . . . . . .

±25 V

Digital Input Voltage to DGND . . . . . . . –0.3 V, VDD +0.3 V

IOUTA, IOUTB to DGND . . . . . . . . . . . . . . –0.3 V, VDD +0.3 V

AGNDA, AGNDB to DGND . . . . . . . . . –0.3 V, VDD +0.3 V

Power Dissipation (Any Package)

To +75

°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW

Derates Above +75

°C . . . . . . . . . . . . . . . . . . . . . 6 mW/°C

Operating Temperature Range

Commercial Plastic (J, K, L Versions) . . . . –40

°C to +85°C

Industrial Hermetic (A, B, C Versions) . . . –40

°C to +85°C

Extended Hermetic (S, T, U Versions) . . –55

°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300

°C

*Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in

the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD7537 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

Figure 1. Timing Diagram

ORDERING GUIDE

Temperature

Relative

Gain

Package

Model

Range

Accuracy Error

Option

AD7537JN

–40

°C to +85°C ±1 LSB

±6 LSB N-24

AD7537KN

–40

°C to +85°C ±1/2 LSB ±3 LSB N-24

AD7537LN

–40

°C to +85°C ±1/2 LSB ±1 LSB N-24

AD7537JP

–40

°C to +85°C ±1 LSB

±6 LSB P-28A

AD7537KP

–40

°C to +85°C ±1/2 LSB ±3 LSB P-28A

AD7537LP

–40

°C to +85°C ±1/2 LSB ±1 LSB P-28A

AD7537AQ

–40

°C to +85°C ±1 LSB

±6 LSB Q-24

AD7537BQ

–40

°C to +85°C ±1/2 LSB ±3 LSB Q-24

AD7537CQ

–40

°C to +85°C ±1/2 LSB ±1 LSB Q-24

AD7537SQ

–55

°C to +125°C ±1 LSB

±6 LSB Q-24

AD7537TQ

–55

°C to +125°C ±1/2 LSB ±3 LSB Q-24

AD7537UQ

–55

°C to +125°C ±1/2 LSB ±2 LSB Q-24

AD7537SE

–55

°C to +125°C ±1 LSB

±6 LSB E-28A

AD7537TE

–55

°C to +125°C ±1/2 LSB ±3 LSB E-28A

AD7537UE

–55

°C to +125°C ±1/2 LSB ±2 LSB E-28A

NOTES

1Analog Devices reserves the right to ship ceramic packages (D-24A) in lieu of

cerdip packages (Q-24).

2To order MIL-STD-883, Class B processed parts, add/883B to part number.

Contact your local sales office for military data sheet.

3E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip

Carrier; Q = Cerdip.

(VDD = +10.8 V to +16.5 V, VREFA = VREFB = +10 V; IOUTA = AGNDA = 0 V, IOUTB = AGNDB = 0 V.)

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