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IRFS7437TRLPBF Folha de dados(PDF) 3 Page - International Rectifier

Nome de Peças IRFS7437TRLPBF
Descrição Electrónicos  HEXFETPower MOSFET
PDF  11 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFS7437TRLPBF Folha de dados(HTML) 3 Page - International Rectifier

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IRFS/SL7437PbF
www.irf.com
3
September 06, 2012
D
S
G
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
160
–––
–––
S
Qg
Total Gate Charge
–––
150
225
nC
Qgs
Gate-to-Source Charge
–––
41
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
51
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
99
–––
td(on)
Turn-On Delay Time
–––
19
–––
ns
tr
Rise Time
–––
70
–––
td(off)
Turn-Off Delay Time
–––
78
–––
tf
Fall Time
–––
53
–––
Ciss
Input Capacitance
–––
7330 –––
pF
Coss
Output Capacitance
–––
1095 –––
Crss
Reverse Transfer Capacitance
–––
745
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) iÃ
–––
1310 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––
1735 –––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 250
™
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1000
A
(Body Diode)
Ãd
VSD
Diode Forward Voltage
–––
1.0
1.3
V
trr
Reverse Recovery Time
–––
30
–––
ns
TJ = 25°C
VR = 34V,
–––
30
–––
TJ = 125°C
IF = 100A
Qrr
Reverse Recovery Charge
–––
24
–––
nC TJ = 25°C
di/dt = 100A/μs
g
–––
25
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.3
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 10V g
VDD = 20V
ID = 100A, VDS =20V, VGS = 10V
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
TJ = 25°C, IS = 100A, VGS = 0V g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
VGS = 0V, VDS = 0V to 32V
VGS = 10V g
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
ID = 30A
RG = 2.7
Ω



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