SIOLS2000V2 datasheet(2/4 Pages) SECELECTRONICS

2 / 4 page

Current Sensors

SIOLSV2

V2.00

May 1, 2012

Parameters Table

PARAMETERS

SYMBOL

UNIT

VALUE

CONDITIONS

Electrical data

Supply voltage(±5%)(1)

±15

Current consumption

±15

Output voltage

Vout

±4

@ ± IPN, RL = 10 kΩ,

TA = 25°C

Isolation resistance

RIS

MΩ

>1000

@ 500 VDC

Output internal resistance

ROUT

Ω

100

Load resistance(2)

KΩ

>10

Accuracy - Dynamic performance data

Linearity(3)(0…±IPN)

εL

% of IPN

<±1

@ IPN, TA = 25°C

Accuracy

% of IPN

<±1

@ IPN, TA = 25°C

(excluding offset)

Electrical offset voltage

VOE

<±20

@TA = 25°C

Hysteresis offset voltage

VOH

<±10

@ IP= 0

Temperature coefficient of VOE

TCVOE

mV/K

<±1

Temperature coefficient of

VOUT

TCVOUT

%/K

<±0.1

Response time

μS

@ 90% of IPN

Frequency bandwidth(4)

kHz

DC~25

@-3dB

General data

Ambient operating temperature

°C

-40 ~ +85

Ambient storage temperature

°C

-40 ~ +105

Mass

300

Isolation characteristics

Rated isolation voltage rms

1000

Rms voltage for AC

isolation test

@50 Hz, 1 min

Notes:

1) Operating at ±12V ≤VC<±15V will reduce the measuring range.

2) If the customer uses 10KΩ of the load resistor, the primary current has to be limited as the

nominal.

3) Linearity data exclude the electrical offset.

4) Please refer to derating curves in the technical file to avoid excessive core heating at high

frequency.

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