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STPS30H100C Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STPS30H100C
Descrição Electrónicos  High voltage power Schottky rectifier
PDF  10 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS30H100C Folha de dados(HTML) 3 Page - STMicroelectronics

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STPS30H100C
Characteristics
Doc ID 6347 Rev 8
3/10
Figure 1.
Average forward power dissipation
versus average forward current (per
diode)
Figure 2.
Average forward current versus
ambient temperature (
δ = 0.5, per
diode)
P
(W)
F(AV)
0
2468
10
12
14
16
18
20
0
2
4
6
8
10
12
14
T
δ=tp/T
tp
I
(A)
F(AV)
δ = 1
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
I
(A)
F(AV)
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
T
δ=tp/T
tp
T
(°C)
amb
R=R
th(j-a)
th(j-c)
R
=15°C/W
th(j-a)
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(tp)
P
(1 µs)
ARM
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(Tj)
P
(25 °C)
ARM
ARM
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
220
240
IM
t
δ=0.5
I (A)
M
t(s)
T =25°C
a
T =75°C
a
T =150°C
a
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse



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