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STTH802-Y Folha de dados(PDF) 3 Page - STMicroelectronics |
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STTH802-Y Folha de dados(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() STTH802-Y Characteristics Doc ID 018563 Rev 2 3/7 Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration Figure 5. Junction capacitanceversus reverse applied voltage (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) 0 20 40 60 80 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I M(A) T d=tp/T tp I M T δ=tp/T tp I M P = 2 W P = 2 W P = 1 W P = 1 W P = 5 W P = 5 W δ 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I FM(A) T j=25°C T j=150°C VFM(V) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I FM(A) T j=25°C T j=150°C VFM(V) 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Z th(j-c)/Rth(j-c) Single pulse tp(s) 10 100 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) 0 20 40 60 80 100 120 140 160 10 100 1000 Q RR(nC) I F=8A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) |
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