STPS2045CH datasheet(3/7 Pages) STMICROELECTRONICS

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STPS2045CH

Characteristics

Doc ID 023045 Rev 1

3/7

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

IF(AV)(A)

PF(AV)(W)

δ = 0.05

δ = 0.2

δ = 0.5

δ = 0.1

δ = 1

δ = tp/T

100

200

500

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Relative variation of thermal

impedance junction to case versus

pulse duration

0.001

0.01

0.1

100

1000

P(tp)

(10 µs)

ARM

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tP(s)

th(j-c)/Rth(j-c)

Single pulse

Figure 6.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 7.

Forward voltage drop versus

forward current (per diode)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

I (µA)

V (V)

T =150°C

T =125°C

T =100°C

T =75°C

T =50°C

T =25°C

(A)

100

1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

(V)

T =125°C

(maximum values)

T =125°C

(typical values)

T =25°C

(maximum values)

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