Characteristics

STPS30M120S

2/8

Doc ID 022918 Rev 1

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values with terminals 1 and 3 short circuited at

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

120

V

50

A

Average forward current,

δ = 0.5

30

A

Surge non repetitive forward current

260

A

(1)

1.

For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

Repetitive peak avalanche power

1450

W

(2)

2.

See Figure 9

Maximum repetitive peak

avalanche voltage

150

V

VASM

(2)

Maximum single-pulse

peak avalanche voltage

150

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

1.3

°C/W

Table 4.

Static electrical characteristics (terminals 1 and 3 short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage

current

-

70

345

µA

-

25

65

mA

(2)

2.

Forward voltage drop

-

0.45

0.50

V

-

0.52

0.57

-0.75

-

0.57

0.62

-0.90

-

0.66

0.73

dPtot

dTj

<

1

Rth(j-a)