ACE4922 datasheet(3/7 Pages) ACE

Nome de Peças	ACE4922

Descrição Electrónicos	Dual N-Channel Enhancement Mode MOSFET

PDF	7 Pages

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Fabricante Electrônico	ACE [ACE Technology Co., LTD.]

Página de início	http://www.ace-ele.com

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ACE4922

Dual N-Channel Enhancement Mode MOSFET

VER 1.3

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250 uA

Gate Threshold Voltage

VGS(th)

VD=VGS, ID=250uA

0.35

1.0

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

100

Zero Gate Voltage Drain

Current

IDSS

VDS=20V, VGS=0V

VDS=20V, VGS=0V TJ=55℃

On-State Drain Current

ID(ON)

VDS≧4.5V, VGS=5V

0.7

Drain-Source

On-Resistance

RDS(ON)

VGS=4.5V, ID=0.95A

0.26

0.38

VGS=2.5V, ID=0.75A

0.32

0.45

VGS=1.8V, ID=0.65A

0.42

0.80

Forward Transconductance

gfs

VDS=10V,ID=0.4A

1.0

Diode Forward Voltage

VSD

IS=0.15A, VGS=0V

0.8

1.2

Dynamic

Total Gate Charge

VDS=10V, VGS=4.5V, ID=0.6A

1.2

1.5

Gate-Source Charge

Qgs

0.2

Gate-Drain Charge

Qgd

0.3

Turn-On Time

td(on)

VDD=10V, RL=10Ω, ID=0.5A,

VGEN=4.5V, RG=6Ω

Turn-Off Time

td(off)

1.2

2.8

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