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L6391 Folha de dados(PDF) 17 Page - STMicroelectronics |
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L6391 Folha de dados(HTML) 17 Page - STMicroelectronics |
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17 / 21 page ![]() L6391 Bootstrap driver Doc ID 17892 Rev 1 17/21 The following equation is useful to compute the drop on the bootstrap DMOS: Equation 3 where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1 V, if the Tcharge is 5 μs. In fact: Equation 4 Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 8. Bootstrap driver with high voltage fast recovery diode Figure 9. Bootstrap driver with internal charge pump V drop I ch e arg Rdson V drop → Q gate T ch e arg ------------------R dson == V drop 30nC 5 μs --------------- 120 Ω 0.7V ∼ ⋅ = TO LOAD H.V. HVG LVG CBOOT DBOOT BOOT V CC OUT b HVG LVG TO LOAD H.V. CBOOT V CC OUT BOOT |
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