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RN2907FS Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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RN2907FS Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() RN2907FS~RN2909FS 2010-07-08 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 Collector cut-off current RN2907FS to 2909FS ICEO VCE = −20 V, IB = 0 ⎯ ⎯ −500 nA RN2907FS VEB = −6 V, IC = 0 −0.088 ⎯ −0.131 RN2908FS VEB = −7 V, IC = 0 −0.085 ⎯ −0.126 Emitter cut-off current RN2909FS IEBO VEB = −15 V, IC = 0 −0.182 ⎯ −0.271 mA RN2907FS 120 ⎯ ⎯ RN2908FS 120 ⎯ ⎯ DC current gain RN2909FS hFE VCE = −5 V, IC = −10 mA 100 ⎯ ⎯ Collector-emitter saturation voltage RN2907FS to 2909FS VCE (sat) IC = −5 mA, IB = −0.25 mA ⎯ ⎯ −0.15 V RN2907FS −0.7 ⎯ −1.5 RN2908FS −0.8 ⎯ −2.2 Input voltage (ON) RN2909FS VI (ON) VCE = −0.2 V, IC = −5 mA −1.6 ⎯ −5.0 V RN2907FS −0.5 ⎯ −1.0 RN2908FS −0.6 ⎯ −1.1 Input voltage (OFF) RN2909FS VI (OFF) VCE = −5 V, IC = −0.1 mA, −1.3 ⎯ −2.6 V Collector output capacitance RN2907FS to 2909FS Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF RN2907FS 8 10 12 RN2908FS 17.6 22 26.4 Input resistor RN2909FS R1 ⎯ 37.6 47 56.4 k Ω RN2907FS 0.17 0.213 0.255 RN2908FS 0.374 0.468 0.562 Resistor ratio RN2909FS R1/R2 ⎯ 1.71 2.14 2.56 |
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