RN1967CT~RN1969CT

2009-04-17

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1967CT,RN1968CT,RN1969CT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

• Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

• Complementary to RN2967CT to RN2969CT

Equivalent Circuit and Bias Resistor Values

(Q1, Q2 common)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

RN1967CT

to

RN1969CT

20

V

RN1967CT

6

RN1968CT

7

Emitter-base voltage

RN1969CT

15

V

Collector current

50

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

RN1967CT

to

RN1969CT

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Total rating

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1K1A

Weight : 1 mg (typ.)

Equivalent Circuit

(top view)

6

5

4

1

2

3

Q2

Q1

R1

B

C

E

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN1967CT

10

47

RN1968CT

22

47

RN1969CT

47

22

0.15±0.03

４

５

６

３

２

１

0.7±0.03

1.0±0.05

0.35±0.02

0.35±0.02

0.075±0.03

CST6

1.EMITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

6.COLLECTOR1

(E1)

(E2)

(B2)

(C2)

(B1)

(C1)