HN2C01FE

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN2C01FE

Audio Frequency General Purpose Amplifier Applications

Small package (dual type)

= 0.95 (typ.)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

60

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

30

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

―

―

―

0.1

μA

Emitter cut-off current

―

―

―

0.1

μA

DC current gain

―

120

―

400

―

Collector-emitter saturation voltage

―

―

0.1

0.25

V

Transition frequency

―

60

―

―

Collector output capacitance

―

―

2

―

pF

Marking

1.EMITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

6.COLLECTOR1

(E1)

(E2)

(B2)

(C2)

(B1)

(C1)

JEDEC

―

JEITA

―

TOSHIBA

2-2N1A

Weight: 3mg

Unit: mm

1

2

3

4

5

6

L1Y

Type Name

hFE Rank