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33663 Folha de dados(PDF) 12 Page - Freescale Semiconductor, Inc |
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33663 Folha de dados(HTML) 12 Page - Freescale Semiconductor, Inc |
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12 / 37 page ![]() Analog Integrated Circuit Device Data 12 Freescale Semiconductor 33663 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Receiver Threshold Center (VTH_DOM + VTH_REC)/2 VBUS_CNT 0.475 0.5 0.525 VSUP Receiver Threshold Hysteresis (VTH_REC - VTH_DOM) VHYS – – 0.175 VSUP LIN dominant level with 500 680 and 1.0 k load on the LIN bus VLINDOM_LEVEL – – 0.3 VSUP VBAT_SHIFT VSHIFT_BAT 0.0 – 11.5% VBAT GND_SHIFT VSHIFT_GND 0.0 – 11.5% VBAT LIN Wake-up Threshold from Sleep Mode VBUSWU – 4.3 5.3 V LIN Pull-up Resistor to VSUP RSLAVE 20 30 60 k LIN internal capacitor(13) CLIN – – 30 pF Over-temperature Shutdown(14) TLINSD 150 160 200 °C Over-temperature Shutdown Hysteresis TLINSD_HYS – 20 – °C INH1, INH2 OUTPUT PINS Driver ON Resistance (Normal Mode) IINH = 50 mA INHON – – 50 Current load capability From 7.0 V < VSUP < 18 V IINH_load – – 30 mA Leakage Current (Sleep Mode) 0 < VINH < VSUP ILEAK -5.0 – 5.0 A Over-temperature Shutdown(15) TINHSD 150 160 200 °C Over-temperature Shutdown Hysteresis TINHSD_HYS – 20 – °C Notes 13. This parameter is guaranteed by process monitoring but not production tested. 14. When an over-temperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This parameter is tested with a test mode on ATE and characterized at laboratory. 15. When an over-temperature shutdown occurs, the INH1, INH2 high side are switched off and the LIN transmitter and receiver are in recessive state. This parameter is tested with a test mode on ATE and characterized at laboratory. Table 5. Static Electrical Characteristics Characteristics noted under conditions 7.0 V VSUP 18 V, -40 C TA 125 C, GND = 0 V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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