EBJ41HE4BDFD, EBJ41HE4BDFM, EBJ41HE4BDFP

Data Sheet E1580E30 (Ver. 3.0)

10

Electrical Specifications

• All voltages are referenced to VSS (GND).

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Notes

Power supply voltage

VDD

−0.4 to +1.975

V

1, 3, 4

Input voltage

VIN

−0.4 to +1.975

V

1, 4

Output voltage

VOUT

−0.4 to +1.975

V

1, 4

Reference voltage

VREFCA

−0.4 to 0.6 × VDD

V

3, 4

Reference voltage for DQ

VREFDQ

−0.4 to 0.6 × VDDQ

V

3, 4

Storage temperature

Tstg

−55 to +100

°C

1, 2, 4

Power dissipation

PD

18

W

Short circuit output current

IOUT

50

mA

1, 4

Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at these or any other

conditions above those indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect reliability.

2. Storage temperature is the case surface temperature on the center/top side of the DRAM.

3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than

0.6

× VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.

4. DDR3 SDRAM component specification.

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Operating Temperature Condition

Parameter

Symbol

Rating

Unit

Notes

Operating case temperature

TC

0 to +95

°C

1, 2, 3

Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be

supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C

under all operating conditions.

3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C

and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional

conditions apply:

a)

Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to

3.9µs. (This double refresh requirement may not apply for some devices.)

b)

If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to

either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit

[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).