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SFH640 Folha de dados(PDF) 3 Page - Siemens Semiconductor Group |
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SFH640 Folha de dados(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 3 page ![]() 5–3 SFH640 Figure 8. Permissible loss diode IF= f(TA) Figure 9. Permissible power dissipa- tion PIOT=f(TA) Figure 5. Output characteristics (typ.) TA=25°C, ICE=f(VCE, IF) Figure 6. Transistor capacitances (typ.) TA=25°C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB) Figure 7. Collector-emitter leakage current (typ.) IF=0, RBE=1 MW, ICER=f(VCE) Figure 2. Current transfer ratio (typ.) VCE=10 V, TA=25°C, normalized to IF=10 mA, NCTR=f(IF) Figure 3. Diode forward voltage (typ.) VF=f(IF,TA) Figure 4. Output characteristics (typ.) TA=25°C, ICE=f(VCE, IB) |
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