8

HMC999

v01.0112

GaN MMIC 10 WATT POWER AMPLIFIER,

0.01 - 10 GHz

Products and Product Information are Subject to Change Without Notice.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

pad number

function

Description

interface schematic

1

rfin

This pad is DC coupled and matched to 50 ohms.

external blocking capacitor is required

2, 6

VGG2

Gate control 2 for amplifier. Attach bypass capacitor

per application circuit herein. for nomiinal operation

+22V should be applied to either pad 2 or pad 6.

3, 4

AGC1, AGC2

low frequency termination. Attach bypass capacitor

per application circuit herein.

5

rfoUT &

VDD

rf output for amplifier. Connect DC bias (Vdd)

network to provide drain current idd). see application

circuit herein.

7, 8

VGG1

Gate control 1 for amplifier. Attach bypass capacitor

per application circuit herein. please follow “mmiC

Amplifier Biasing procedure” application note. This

voltage may be applied to either pad 7 or pad 8.

Die Bottom

GnD

Die bottom must be connected to rf/DC ground

Pad Descriptions