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ADP7102ACPZ-9.0-R7 Folha de dados(PDF) 23 Page - Analog Devices

Nome de Peças ADP7102ACPZ-9.0-R7
Descrição Electrónicos  20 V, 300 mA, Low Noise, CMOS LDO
PDF  28 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

ADP7102ACPZ-9.0-R7 Folha de dados(HTML) 23 Page - Analog Devices

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Data Sheet
ADP7102
Rev. A | Page 23 of 28
In the case where the board temperature is known, use the
thermal characterization parameter, ΨJB, to estimate the
junction temperature rise (see Figure 77 and Figure 78).
Maximum junction temperature (TJ) is calculated from
the board temperature (TB) and power dissipation (PD)
using the following formula:
TJ = TB + (PD × ΨJB)
(5)
The typical value of ΨJB is 15.1°C/W for the 8-lead LFCSP
package and 31.3°C/W for the 8-lead SOIC package.
TOTAL POWER DISSIPATION (W)
0
20
40
60
80
100
120
140
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
TB = 25°C
TB = 50°C
TB = 65°C
TB = 85°C
TJ MAX
Figure 77. LFCSP
TOTAL POWER DISSIPATION (W)
0
20
40
60
80
100
120
140
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TB = 25°C
TB = 50°C
TB = 65°C
TB = 85°C
TJ MAX
Figure 78. SOIC



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