TIP107G-TN3-R datasheet(2/4 Pages) UTC

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TIP107

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-023,C

ABSOLUTE MAXIMUM RATING (T

C=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-100

Collector-Emitter Voltage

VCES

-100

Emitter-Base Voltage

VEBO

-5

-8

Collector Current

Pulse

ICP

-15

Base Current

-1

Collector Power Dissipation

Junction Temperature

150

°C

Storage Temperature

TSTG

-65~+150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Sustaining Voltage

VCEO(SUS)

IC=-30mA, IB=0A

-100

Collector-Base Cut-Off Current

ICBO

VCB=-100V, IE=0A

-50

µA

Collector-Emitter Cut-Off Current

ICEO

VCE=-50V, IB=0A

µA

Emitter-Base Cut-Off Current

IEBO

VEB=-5V, IC=0A

-2

ON CHARACTERISTICS

hFE1

VCE=-4V, IC=-3A

1000

20000

DC Current Gain

hFE2

VCE=-4V, IC=-8A

200

IC=-3A, IB=-6mA

-2

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-8A, IB=-80mA

-2.5

Base-Emitter ON Voltage

VBE(ON)

VCE=-4V, IC=-8A

-2.8

SMALL-SIGNAL CHARACTERISTICS

Output Capacitance

Cob

VCB=-10V, IE=0A, f=0.1MHZ

300

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