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UTT50P04G-TN3-R Folha de dados(PDF) 2 Page - Unisonic Technologies |
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UTT50P04G-TN3-R Folha de dados(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTT50P04 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-598.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V TC=25°C -60 (Note 3) A Continuous (Note 2) TC=100°C ID -43 A Drain Current Pulsed IDM -100 A Continuous Source Current (Diode Conduction) IS -60 (Note 3) A Avalanche Current IAR -40 A Avalanche Energy EAS 80 mJ TC=25°C 93.7 (Note 2) W Power Dissipation (Note 2) TA=25°C PD 3 (Note 1) W Junction Temperature TJ -55~175 °C Storage Temperature TSTG -55~175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT t≤10 sec. 18 Junction to Ambient (Note 1) Steady State θJA 50 Junction to Case θJC 1.6 °C/W Notes: 1. Surface Mounted on 1”x1” FR4 Board. 2. See SOA curve for voltage derating. 3. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50A. |
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