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UTD408L-TN3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças UTD408L-TN3-R
Descrição Electrónicos  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTD408L-TN3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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UTD408
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-184.A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TC=25°C)
ID
18
A
Pulsed Drain Current
IDM
40
A
Avalanche Current
IAR
18
A
Repetitive Avalanche Energy (L=0.1mH)
EAR
40
mJ
Power Dissipation (TC=25°C)
PD
60
W
Junction Temperature
TJ
+175
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
40
50
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24V, VGS =0 V
1
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.8
2.5
V
On State Drain Current
ID(ON)
VDS =5V, VGS =4.5V
40
A
VGS =10V, ID =18A
13.6
18
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5V, ID =10A
20.6
27
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1040 1250
Output Capacitance
COSS
180
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1MHz
110
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
4.5
Turn-ON Rise Time
tR
3.9
Turn-OFF Delay Time
tD(OFF)
17.4
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V,RL=0.82Ω,
RGEN =3Ω
3.2
ns
Total Gate Charge
QG
19.8
25
Gate Source Charge
QGS
2.5
Gate Drain Charge
QGD
VDS =15V, VGS =10V, ID =18A
3.5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.75
1
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
18
A
Body Diode Reverse Recovery Time
tRR
IF=18 A, dI/dt=100A/µs
19
25
ns
Body Diode Reverse Recovery
Charge
QRR
IF=18 A, dI/dt=100A/µs
8
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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