| Os motores de busca de Datasheet de Componentes eletrônicos |
|
UT6302G-AE2-R Folha de dados(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT6302G-AE2-R Folha de dados(HTML) 3 Page - Unisonic Technologies |
|
3 / 6 page ![]() UT6302 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-363.E ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-0.61A, VGS=0V -1.2 V Maximum Continuous Drain-Source Diode Forward Current IS -0.54 A Maximum Pulsed Drain-Source Diode Forward Current (Note 1) ISM -4.9 A Reverse Recovery Time trr TJ=25°C ,IF=-0.61A, di/dt=100A/µs (Note 2) 35 53 nS Reverse Recovery Charge QRR 26 39 nC Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX) 2. Pulse Width ≤300μs, Duty Cycle ≤2%. |
|
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |