UT3414L-AE3-R datasheet(1/4 Pages) UTC

Nome de Peças	UT3414L-AE3-R

Descrição Electrónicos	N-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

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Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT3414

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-248.E

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UT3414 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate voltages

as low as 1.8V. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* RDS(ON) < 50mΩ @VGS = 4.5V

* RDS(ON) < 63mΩ @VGS = 2.5V

* RDS(ON) < 87mΩ @VGS = 1.8V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3414L-AE3-R

UT3414G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34Q

L: Lead Free

G: Halogen Free

Nº de peça semelhante - UT3414L-AE3-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	UT3414G-AE3-R	222Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Unisonic Technologies	UT3414	222Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT3414L-AE3-R Folha de dados(PDF) 1 Page - Unisonic Technologies

UT3414L-AE3-R Folha de dados(HTML) 1 Page - Unisonic Technologies

Nº de peça semelhante - UT3414L-AE3-R

Descrição semelhante - UT3414L-AE3-R

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