UT3406G-AE3-R datasheet(1/3 Pages) UTC

Nome de Peças	UT3406G-AE3-R

Descrição Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3406

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-336.a

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT3406 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and can be operated at low gate

voltages. This device is perfect fit for use as a load switch or in PWM

applications.

FEATURES

* VDS (V) = 30V

* ID = 3.6A (VGS = 10V)

* RDS(ON) <65mΩ (VGS = 10V)

* RDS(ON) <105mΩ (VGS = 4.5V)

* Halogen Free

SYMBOL

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT3406G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

346G

Nº de peça semelhante - UT3406G-AE3-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	UT3406G-AE3-R	492Kb / 9P	N-Channel 30-V (D-S) MOSFET

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Descrição semelhante - UT3406G-AE3-R

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UT3406G-AE3-R Folha de dados(PDF) 1 Page - Unisonic Technologies

UT3406G-AE3-R Folha de dados(HTML) 1 Page - Unisonic Technologies

Nº de peça semelhante - UT3406G-AE3-R

Descrição semelhante - UT3406G-AE3-R

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