UT2304

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-150.D

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

2.5

A

Pulsed Drain Current (Note 1, 2)

10

A

Power Dissipation

1.4

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

90

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±100

nA

Breakdown Voltage Temperature Coefficient

0.1

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

117

mΩ

Static Drain-Source On-State Resistance

(Note 2)

190

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

120

190

pF

Output Capacitance

62

pF

Reverse Transfer Capacitance

24

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

5

ns

Turn-ON Rise Time

9

ns

Turn-OFF Delay Time

11

ns

Turn-OFF Fall Time

2

ns

Total Gate Charge (Note 2)

3

5

nC

Gate-Source Charge

0.8

nC

Gate-Drain Charge

1.8

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage (Note 2)

1.2

V

Reverse Recovery Time (Note 2)

24

ns

Reverse Recovery Charge

dI/dt=100A/μs

23

nC

2. Pulse width ≤300μs, duty cycle ≤2%.

3. Surface mounted on 1 in