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USS4350G-AB3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças USS4350G-AB3-R
Descrição Electrónicos  50V, 5A NPN LOW VCE(SAT) TRANSISTOR
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

USS4350G-AB3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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USS4350
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R207-022.C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
DC
IC
3
A
Collector Current
Peak
ICM
5
A
Peak Base Current
IBM
1
A
SOT-89
1.4
Power Dissipation (TC=25°C) (Note 2)
SOT-223
PD
2
W
Junction Temperature
TJ
150
°C
Operating Temperature
TOPR
-65 ~ +150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
SOT-89
90
Junction to Ambient (Note)
SOT-223
θJA
62.5
°C/W
Note: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Cut-off Current
ICBO
VCB=50 V, IE =0
100
nA
Emitter Cut-off Current
IEBO
VEB=5 V, IC =0
100
nA
IC=500 mA, IB=50 mA
90
mV
IC=1 A, IB=50 mA
170
mV
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2 A, IB=200 mA (Note)
290
mV
Base-Emitter Saturation Voltage
VBE(SAT)
IC=2 A, IB=200 mA (Note)
1.2
V
Base-Emitter Turn-On Voltage
VBE(ON)
VCE =2V; IC = 1 A (Note)
1.1
V
hFE1
VCE =2V, IC=500 mA
200
hFE2
VCE =2V, IC=1 A (Note)
200
DC Current Gain
hFE3
VCE =2V, IC=2 A (Note)
100
Equivalent On-Resistance
RCE(SAT)
IC=2 A, IB=200 mA (Note)
110
<145
mΩ
Transition Frequency
fT
IC=100 mA, VCE=5 V, f=100 MHz
100
MHz
Collector Capacitance
CC
VCB=10 V; IE =Ie = 0; f =1 MHz
30
pF
Note: Pulse test: tP ≤300 μs; Duty cycle≤2%



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