UFR9120G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

UFR9120

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-570.a

ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-100

Gate-Source Voltage

VGSS

±20

TC=25°C

-6.6

Continuous

TC=100°C

-4.2

Drain Current, VGS@-10V

Pulsed (Note 2)

IDM

-26

Avalanche Current (Note 2)

IAR

-6.6

Single Pulsed (Note 3)

EAS

100

Avalanche Energy

Repetitive (Note 2)

EAR

4.0

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-5.0

V/ns

Power Dissipation TC=25°C

Linear Derating Factor

0.32

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11)

3. Starting TJ=25°C, L=13mH RG=25Ω, IAS=-3.9A (See Fig.12)

4. ISD ≤ -4.0A, di/dt ≤300A/μs,VDD ≤ V(BR)DSS, TJ ≤ 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

110

°C/W

Junction to Case

θJC

3.1

°C/W

Note: 1. For recommended footprint and soldering techniques refer to application note

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