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PZTA92G-AA3-R Folha de dados(PDF) 2 Page - Unisonic Technologies |
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PZTA92G-AA3-R Folha de dados(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() PZTA92/93 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R207-006.D ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage PZTA92 VCBO -300 V PZTA93 -200 V Collector-Emitter Voltage PZTA92 VCEO -300 V PZTA93 -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Power Dissipation Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 PZTA92 -300 V PZTA93 -200 V Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB=0 PZTA92 -300 V PZTA93 -200 V Emitter-Base Breakdown Voltage BVEBO IE=-100μA, IC =0 -5 V Collector Cut-Off Current ICBO VCB=-200V, IE=0 PZTA92 -0.25 μA VCB=-160V, IE=0 PZTA93 -0.25 μA Emitter Cut-Off Current IEBO VEB=-3V, IC =0 -0.10 μA DC Current Gain (Note) hFE VCE=-10V, IC =-1mA 60 VCE=-10V, IC =-10mA 80 VCE=-10V, IC =-30mA 80 Collector-Emitter Saturation Voltage VCE(SAT) IC =-20mA, IB=-2mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC =-20mA, IB=-2mA -0.90 V Current Gain Bandwidth Product fT VCE=-20V,Ic=-10mA, f=100MHz 50 MHz Collector Base Capacitance CCB VCB=-20V, IE=0, f=1MHz PZTA92 6 pF PZTA93 8 pF Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN) |
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