MPSA92G-AB3-R datasheet(2/4 Pages) UTC

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MPSA92/93

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-019.C

ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

MPSA92

VCBO

-300

MPSA93

-200

Collector-Emitter Voltage

MPSA92

VCEO

-300

MPSA93

-200

Emitter-Base Voltage

VEBO

-5

Collector Current

-500

Collector Dissipation

SOT-89

TO-92

1.5

Junction Temperature

150

°С

Storage Temperature

TSTG

-55~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown

Voltage

MPSA92

BVCBO

IC=-100µA, IE=0

-300

MPSA93

-200

Collector-Emitter Breakdown

Voltage

MPSA92

BVCEO

IC=-1mA, IB=0

-300

MPSA93

-200

Emitter-Base Breakdown Voltage

BVEBO

IE=-100µA, IC=0

-5

Collector Cut-Off Current

MPSA92

ICBO

VCB=-200V, IE=0

-0.25 µA

MPSA93

-0.25 µA

Emitter Cut-Off Current

IEBO

VEB=-3V, IC=0

-0.10 µA

ON CHARACTERISTICS

DC Current Gain(note)

hFE

VCE=-10V, IC=-1mA

VCE=-10V, IC=-10mA

VCE=-10V, IC=-30mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-20mA, IB=-2mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-20mA, IB=-2mA

-0.90

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

VCE=-20V, IC=-10mA, f=100MHz

MHz

Output Capacitance

MPSA92

Cob

VCB=-20V, IE=0, f=1MHz

MPSA93

Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)<200mV

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