12N50L-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

12N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-528.c

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

±30

Drain Current

Continuous (TC=25°C)

12 (Note 2)

Pulsed (Note 3)

IDM

48 (Note 2)

Avalanche Current (Note 3)

IAR

Avalanche Energy

Single Pulsed (Note 4)

EAS

684

Repetitive (Note 5)

EAR

19.5

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

Power Dissipation

(TC=25°C)

TO-220/ TO-263

192

TO-220F1

Derate above 25°C

TO-220/ TO-263

1.53

W/°C

TO-220F1

0.33

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L =9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

TO-220/ TO-263

θJC

0.65

°C/W

TO-220F1

3.0

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