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12N10L-TN3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças 12N10L-TN3-R
Descrição Electrónicos  12A, 100V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

12N10L-TN3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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12N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-737.a
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
TC = 25°C
ID
12
A
TC = 100°C
8.5
A
Pulsed (Note 2)
IDM
48
A
Power Dissipation
PD
30
W
Derating Factor
0.2
W/°C
Avalanche Energy (Note 3)
EAS
100
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting TJ = 25°C, ID = 12A, VDD = 50V
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
5
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=Max rating, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A
0.15 0.18
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
430
pF
Output Capacitance
COSS
90
pF
Reverse Transfer Capacitance
CRSS
20
pF



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