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MMDT2227L-AL6-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças MMDT2227L-AL6-R
Descrição Electrónicos  NPN & PNP GENERAL PURPOSE AMPLIFIER
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT2227L-AL6-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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MMDT2227
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-019.a
ABSOLUTE MAXIMUM RATINGS* (TA=25°C , unless otherwise specified)(Note 2)
PARAMETER
SYMBOL
RATINGS
UNIT
TR1
TR2
Collector-Emitter Voltage
VCEO
30
-30
V
Collector-Base Voltage
VCBO
60
-60
V
Emitter-Base Voltage
VEBO
5.0
-5.0
V
Collector Current - Continuous
IC
500
-500
mA
Total Device Dissipation
PD
300
mW
Derate above 25°C
2.4
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
1. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
415
°С/W
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
TR1
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=10mA, IB=0 (Note)
30
V
Collector-Base Breakdown Voltage
V(BR)CBO IC=10 µA, IE=0
60
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
5.0
V
Collector Cutoff Current
ICBO
VCB= 50V, IE=0
30
nA
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
30
nA
ON CHARACTERISTICS
DC Current Gain
hFE
IC=1.0mA, VCE=10V
50
IC=10mA, VCE=10V
75
IC=150mA, VCE= 1 V (Note)
100
IC=300mA, VCE=10V (Note)
30
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=150mA, IB=15mA
0.4
V
IC=300mA, IB=30mA
1.4
V
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
fT
IC= 50mA, VCE=20V, f =100MHz
250
MHz
Output Capacitance
COBO
VCB=10 V, IE=0, f=100 kHz
4.0
pF
Input Capacitance
CIBO
VEB=2.0V, IC=0, f=100 kHz
12
pF
Noise Figure
NF
IC=100µA, VCE=10V,
RS=1.0kΩ, f =1.0kHz
2.0
dB
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%



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