MMBTA56L-AE3-R datasheet(2/5 Pages) UTC

2 / 5 page

MMBTA56

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R206-090,B

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-80

Collector-Emitter Voltage

VCEO

-80

Emitter-Base Voltage

VEBO

-4

Collector Current - Continuous

-500

Total Device Dissipation(Note 1)

Derate Above 25℃

350

2.8

mW/℃

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note 1. Device mounted on FR-4=1.6×1.6×0.06 in

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MAX

UNIT

Thermal Resistance, Junction to Ambient

θJA

357

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note 1)

BVCEO IC=-1.0mA, IB=0

-80

Emitter-Base Breakdown Voltage

BVEBO IE=-100μA, Ic=0

-4

Collector Cutoff Current

ICES

VCE=-60V, IB=0

-0.1

μA

Collector Cutoff Current

ICBO

VCB=-80V, IE=0

-0.1

μA

ON CHARACTERISTICS

DC Current Gain

hFE

IC=-10mA, VCE=-1V

IC=-100mA, VCE=-1V

100

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-100mA, IB=-10mA

-0.25

Base-Emitter on Voltage

VBE(ON) IC=-100mA, VCE=-1V

-1.2

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

(Note2)

IC=-10mA, VCE=-2V,

f=100MHz

100

MHz

Note 1: Pulse test: PW≤300

μs, Duty Cycle≤2%

2: fT is defined as the frequency at which IhfeI extrapolates to unity.

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