MMBTA13

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R206-006.Ca

°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

30

V

Emitter-Base Voltage

10

V

Collector Dissipation

350

mW

Collector Current

500

mA

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

30

V

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

DC Current Gain

10000

Collector-Emitter Saturation Voltage

1.5

V

Base-Emitter on Voltage

2.0

V

Current Gain Bandwidth Product

125

MHz

Note: Pulse test: Pulse Width<300

μs, Duty Cycle=2%

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.