6N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-117.G

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

6.2

A

Continuous Drain Current

6.2

A

Pulsed Drain Current (Note 2)

24.8

A

Avalanche Energy

Single Pulsed (Note 3)

440

mJ

Repetitive (Note 2)

13

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

ns

Power Dissipation

TO-220

125

W

TO-220F/TO-220F1

40

TO-220F2

42

TO-251/TO-252

55

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220/ TO-220F2

62.5

°C/W

TO-220F/TO-220F1

62.5

TO-251/TO-252

110

Junction to Case

TO-220

1.0

°C/W

TO-220F/TO-220F1

3.2

TO-220F2

2.97

TO-251/TO-252

2.27